Harvesting and yransferring vertical pillar arrays of single-Crystal semiconductor devices to arbitrary substrates

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1856-1864

  Vj, Logeeswaran ^a   Katzenmeyer, Aaron M ^a   Islam, M Saif ^a  

^a University of California   (United States)

Author keywords

3 D material integration; Compound semiconductors; heterogeneous material integration; integrated multifunctional devices; micro nano pillars; photon traps; vertical device arrays

Indexed keywords

3-D MATERIAL INTEGRATION; COMPOUND SEMICONDUCTORS; HETEROGENEOUS MATERIALS; MULTIFUNCTIONAL DEVICES; VERTICAL DEVICES;

CONDUCTING POLYMERS; COST REDUCTION; ENERGY CONVERSION; FLEXIBLE DISPLAYS; HARVESTING; INTEGRATION; ORGANIC CONDUCTORS; PHOTONS; PLANTS (BOTANY); POLYANILINE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; THREE DIMENSIONAL;

SUBSTRATES;

EID: 77955175118     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051195     Document Type: Article

References (77)

1. J. P. Bailbe, A. Val, A. Marty, P. Souverain, and J. Tasselli, "Techniques for epitaxial lift-off-Applications and future outlook," J. Phys. IV, vol.9, pp. 113-122, Mar. 1999.
2. C. Bradford, A. Currran, A. Balocchi, B. C. Cavenett, K. A. Prior, and R. J. Warburton, "Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer," J. Cryst. Growth, vol.278, no.1-4, pp. 325-328, May 2005. (Pubitemid 40643368)
3. C. D. Yang, C. L. Ho, M. Y. Wu, J. Y. Su, W. J. Ho, and M. C. Wu, "Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors," Solid State Electron., vol.47, no.10, pp. 1763-1767, Oct. 2003.
4. K. Y. Ahn, R. Stengl, T. Y. Tan, U. Gosele, and P. Smith, "Stability of interfacial oxide layers during silicon-wafer bonding," J. Appl. Phys., vol.65, no.2, pp. 561-563, Jan. 1989.
5. J. E. Bowers, A. K. Srivastava, C. A. Burrus, J. C. Dewinter, M. A. Pollack, and J. L. Zyskind, "High-speed GaInAsSb/GaSb Pin photodetectors for wavelengths to 2.3 μm," Electron. Lett., vol.22, no.3, pp. 137-138, Jan. 1986.
6. K. Furukawa and A. Nakagawa, "Applications of the silicon-wafer directbonding technique to electron devices," Appl. Surf. Sci., vol.41/42, pp. 627-632, Nov. 1989.
7. J. Geske, Y. L. Okuno, J. E. Bowers, and V. Jayaraman, "Vertical and lateral heterogeneous integration," Appl. Phys. Lett., vol.79, no.12, pp. 1760-1762, Sep. 2001. (Pubitemid 33596893)
8. U. Gosele, Y. Bluhm, G. Kastner, P. Kopperschmidt, G. Krauter, R. Scholz, A. Schumacher, S. Senz, Q. Y. Tong, L. J. Huang, Y. L. Chao, and T. H. Lee, "Fundamental issues in wafer bonding," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol.17, no.4, pp. 1145-1152, Jul./Aug. 1999.
9. Y. K. Kim, E. K. Kim, S. W. Kim, and B. K. Ju, "Low temperature epoxy bonding for wafer level MEMS packaging," Sens. Actuators A, Phys., vol.143, no.2, pp. 323-328, May 2008.
10. J. Ohura, T. Tsukakoshi, K. Fukuda, M. Shimbo, and H. Ohashi, "Adielectrically isolated photodiode array by silicon-wafer direct bonding," IEEE Electron Device Lett., vol.EDL-8, no.10, pp. 454-456, Oct. 1987.
11. G. Roelkens, J. Van Campenhout, J. Brouckaert, D. Van Thourhout,R. Baets, P. R. Romeo, P. Regreny, A. Kazmierczak, C. Seassal,X. Letartre, G. Hollinger, J. M. Fedeli, L. Di Cioccio, and C. Lagahe-Blanchard, "III-V/Si photonics by die to wafer bonding," Mater. Today,vol. 10, no. 7/8, pp. 36-43, Jul./Aug. 2007.
12. E. G. Bauer, B. W. Dodson, D. J. Ehrlich, L. C. Feldman, C. P. Flynn,M. W. Geis, J. P. Harbison, R. J. Matyi, P. S. Peercy, P. M. Petroff,J. M. Phillips, G. B. Stringfellow, and A. Zangwill, "Fundamental issues in eteroepitaxy-A Department-of-Energy, Council-on-Materials-Science anel report," J. Mater. Res., vol.5, no.4, pp. 852-894, Apr. 1990.
13. Y. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, andS. I. Chikichev, "Artificial GeSi substrates for heteroepitaxy: Achievementsand problems," Semiconductors, vol.37, no.5, pp. 493-518,May 2003.
14. E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, "Equilibrium limits of coherency in strained nanowire heterostructures, " J. Appl. Phys., vol.97, no.11, p. 114 325-10, Jun. 2005.
15. E. A. Fitzgerald, Y. H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, and B. E. Weir, "Relaxed GexSi1-x structures for III-V integration with Si and high mobility 2-dimensional electron gases in Si," J. Vac. Sci. Technol. B, vol.10, no.4, pp. 1807-1819, Jul./Aug. 1992.
16. N. P. Kobayashi, S. Y. Wang, C. Santori, and R. S. Williams, "Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces," Appl. Phys. A-Mater. Sci. Process., vol.85, no.1, pp. 1-6, Oct. 2006. (Pubitemid 44259592)
17. V. J. Logeeswaran, A. Sarkar, M. S. Islam, N. P. Kobayashi, J. Straznicky, X. Li,W.Wu, S. Mathai, M. R. T. Tan, S. Y.Wang, and R. S.Williams, "A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface," Appl. Phys. A-Mater. Sci. Process., vol.91, no.1, pp. 1-5, Apr. 2008.
18. A. Sarkar, I. Kimukin, C. W. Edgar, S. Yi, and M. S. Islam, "Heteroepitaxial growth dynamics of InP nanowires on silicon," J. Nanophotonics, vol.2, pp. 1-15, Feb. 2008.
19. Z. Y. Fan, H. Razavi, J. W. Do, A. Moriwaki, O. Ergen, Y. L. Chueh, P. W. Leu, J. C. Ho, T. Takahashi, L. A. Reichertz, S. Neale, K. Yu, M. Wu, J. W. Ager, and A. Javey, "Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates," Nat. Mater., vol.8, no.8, pp. 648-653, Aug. 2009.
20. X. Duan, Y. Huang, Y. Cui, J.Wang, and C.M. Lieber, "Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices," Nature, vol.409, no.6816, pp. 66-69, Jan. 2001. (Pubitemid 32098623)
21. C. M. Lieber, "The incredible shrinking circuit," Sci. Amer., vol.285, no.3, pp. 58-64, Sep. 2001.
22. A. Zhang, S. F. You, C. Soci, Y. S. Liu, D. L. Wang, and Y. H. Lo,"Silicon nanowire detectors showing phototransistive gain," Appl. Phys.Lett., vol.93, no.12, p. 121 110, Sep. 2008.
23. E. C. Garnett and P. D. Yang, "Silicon nanowire radial p-n junction solarcells," J. Amer. Chem. Soc., vol.130, no.29, pp. 9224-9225, Jul. 2008.
24. L. E. Greene, M. Law, D. H. Tan, M. Montano, J. Goldberger,G. Somorjai, and P. Yang, "General route to vertical ZnO nanowire arrays using textured ZnO seeds," Nano Lett., vol.5, no.7, pp. 1231-1236, Jul. 2005
25. S.-H. Jung, E. Oh, K. H. Lee, W. Park, and S. H. Jeong, "A sonochemical method for fabricating aligned ZnO nanorods," Adv. Mater., vol.19, no.5, pp. 749-753, Mar. 2007.
26. E. Latu-Romain, P. Gilet, P. Noel, J. Garcia, P. Ferret, M. Rosina, G. Feuillet, F. Levy, and A. Chelnokov, "A generic approach for vertical integration of nanowires," Nanotechnology, vol.19, no.34, p. 345 304, Aug. 2008.
27. L. Tsakalakos, J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima, and J. Rand, "Silicon nanowire solar cells," Appl. Phys. Lett., vol.91, no.23, p. 233 117, Dec. 2007.
28. Y. Huang, X. F. Duan, Q. Q. Wei, and C. M. Lieber, "Directed assembly of one-dimensional nanostructures into functional networks," Science, vol.291, no.5504, pp. 630-633, Jan. 2001. (Pubitemid 32150417)
29. A. Javey, S. Nam, R. S. Friedman, H. Yan, and C. M. Lieber, "Layerby- layer assembly of nanowires for three-dimensional, multifunctional electronics," Nano Lett., vol.7, no.3, pp. 773-777, Mar. 2007.
30. M. C. McAlpine, H. Ahmad, D. W. Wang, and J. R. Heath, "Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors," Nat. Mater., vol.6, no.5, pp. 379-384, May 2007.
31. M. C. McAlpine, R. S. Friedman, and C. M. Lieber, "High-performance nanowire electronics and photonics and nanoscale patterning on flexible plastic substrates," Proc. IEEE, vol.93, no.7, pp. 1357-1363, Jul. 2005.
32. C. A. Bower, E. Menard, and P. E. Garrou, "Transfer printing: An approach for massively parallel assembly of microscale devices," in Proc. 58th ECTC, 2008, pp. 1105-1109.
33. K. J. Lee, M. J. Motala, M. A. Meitl, W. R. Childs, E. Menard, A. K. Shim, J. A. Rogers, and R. G. Nuzzo, "Large-area, selective transfer of microstructured silicon: A printing-based approach to highperformance thin-film transistors supported on flexible substrates," Adv. Mater., vol.17, no.19, pp. 2332-2336, Oct. 2005.
34. Y. K. Chang and F. C. N. Hong, "The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing," Nanotechnology, vol.20, no.19, p. 195 302, May 2009.
35. J.-H. Ahn, H.-S. Kim, E. Menard, K. J. Lee, Z. Zhu, D.-H. Kim, R. G. Nuzzo, J. A. Rogers, I. Amlani, V. Kushner, S. G. Thomas, and T. Duenas, "Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon," Appl. Phys. Lett., vol.90, no.21, p. 213 501, May 2007.
36. 2- sensing properties," Sens. Actuators B, Chem., vol.49, no.3, pp. 273-278, Jul. 1998.
37. H.-C. Yuan, J. Shin, G. Qin, L. Sun, P. Bhattacharya, M. G. Lagally, G. K. Celler, and Z. Ma, "Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes," Appl. Phys. Lett., vol.94, no.1, p. 013 102-3, Jan. 2009.
38. K. Heo, E. Cho, J. E. Yang, M. H. Kim, M. Lee, B. Y. Lee, S. G. Kwon, M. S. Lee, M. H. Jo, H. J. Choi, T. Hyeon, and S. Hong, "Large-scaleassembly of silicon nanowire network-based devices using conventional microfabrication facilities," Nano Lett., vol.8, no.12, pp. 4523-4527,Dec. 2008.
39. S. A. Stauth and B. A. Parviz, "Self-assembled single-crystal siliconcircuits on plastic," Proc. Nat. Acad. Sci. U. S. A., vol.103, no.38, pp. 13 922-13 927, Sep. 2006.
40. A. J. Baca, J. H. Ahn, Y. Sun, M. A. Meitl, E. Menard, H. S. Kim, W. M. Choi, D. H. Kim, Y. Huang, and J. A. Rogers, "Semiconductor wires and ribbons for high-performance flexible electronics," Angew. Chem.-Int. Ed., vol.47, no.30, pp. 5524-5542, Jul. 2008.
41. Z. Y. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, and A. Javey, "Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing," Nano Lett., vol.8, no.1, pp. 20-25, Jan. 2008.
42. D. H. Kim and J. A. Rogers, "Stretchable electronics: Materials strategies and devices," Adv. Mater., vol.20, no.24, pp. 4887-4892, Dec. 2008.
43. K. N. Lee, S. W. Jung, W. H. Kim, M. H. Lee, K. S. Shin, and W. K. Seong, "Well controlled assembly of silicon nanowires by nanowire transfer method," Nanotechnology, vol.18, no.44, p. 445 302, Nov. 2007.
44. J. Yoon, A. J. Baca, S. I. Park, P. Elvikis, J. B. Geddes, L. F. Li, R. H. Kim, J. L. Xiao, S. D. Wang, T. H. Kim, M. J. Motala, B. Y. Ahn, E. B. Duoss, J. A. Lewis, R. G. Nuzzo, P. M. Ferreira, Y. G. Huang, A. Rockett, and J. A. Rogers, "Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs," Nat. Mater., vol.7, no.11, pp. 907-915, Nov. 2008.
45. D. R. Hines, V. W. Ballarotto, E. D. Williams, Y. Shao, and S. A. Solin, "Transfer printing methods for the fabrication of flexible organic electronics," J. Appl. Phys., vol.101, no.2, p. 024 503-9, Jan. 2007.
46. E. Menard, K. J. Lee, D. Y. Khang, R. G. Nuzzo, and J. A. Rogers, "A printable form of silicon for high performance thin film transistors on plastic substrates," Appl. Phys. Lett., vol.84, no.26, pp. 5398-5400, Jun. 2004.
47. Y. G. Sun and J. A. Rogers, "Fabricating semiconductor nano/microwires and transfer printing ordered arrays of them onto plastic substrates," Nano Lett., vol.4, no.10, pp. 1953-1959, Oct. 2004.
48. T. H. Kim, A. Carlson, J. H. Ahn, S. M. Won, S. D. Wang, Y. G. Huang, and J. A. Rogers, "Kinetically controlled, adhesiveless transfer printing using microstructured stamps," Appl. Phys. Lett., vol.94, no.11, p. 113 502-3, Mar. 2009.
49. Z. Qiang, H. Yang, L. Chen, H. Pang, Z. Ma, and W. Zhou, "Fano filters based on transferred silicon nanomembranes on plastic substrates," Appl. Phys. Lett., vol.93, no.6, p. 061 106-3, Aug. 2008.
50. A. J. Tunnell, V.W. Ballarotto, D. R. Hines, and E. D.Williams, "Vertical integration on plastic substrates using transfer printing," Appl. Phys. Lett., vol.93, no.19, p. 193 113-3, Nov. 2008.
51. A. J. Baca, M. A. Meitl, H. C. Ko, S. Mack, H. S. Kim, J. Y. Dong, P. M. Ferreira, and J. A. Rogers, "Printable single-crystal silicon micro/ nanoscale ribbons, platelets and bars generated from bulk wafers," Adv. Funct. Mater., vol.17, no.16, pp. 3051-3062, Nov. 2007.
52. E. Menard, R. G. Nuzzo, and J. A. Rogers, "Bendable single crystal silicon thin film transistors formed by printing on plastic substrates," Appl. Phys. Lett., vol.86, no.9, p. 093 507, Feb. 2005.
53. J.-S. Huang, C.-Y. Hsiao, S.-J. Syu, J.-J. Chao, and C.-F. Lin, "Wellaligned single-crystalline silicon nanowire hybrid solar cells on glass," Sol. Energy Mater. Sol. Cells, vol.93, no.5, pp. 621-624, May 2009.
54. J. M. Spurgeon, K. E. Plass, B. M. Kayes, B. S. Brunschwig, H. A. Atwater, and N. S. Lewis, "Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate," Appl. Phys. Lett., vol.93, no.3, p. 032 112-3, Jul. 2008.
55. R. Pyrz, "Interfacial properties of nanowire-polymer composites," in Proc. XXI Int. Congr. Theor. Appl. Mech., Warsaw, Poland, Aug. 2004, p. 10 244.
56. S. P. Timoshenko, Mechanics of Materials, 2nd ed. Boston, MA: PWSKent, 1984.
57. M. Tabib-Azar, M. Nassirou, R. Wang, S. Sharma, T. I. Kamins, M. S. Islam, and R. S. Williams, "Mechanical properties of self-welded silicon nanobridges," Appl. Phys. Lett., vol.87, no.11, p. 113 102, Sep. 2005.
58. S. Hoffmann, I. Utke, B. Moser, J. Michler, S. H. Christiansen, V. Schmidt, S. Senz, P. Werner, U. Gösele, and C. Ballif, "Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires," Nano Lett., vol.6, no.4, pp. 622-625, Apr. 2006.
59. M. J. Gordon, T. Baron, F. Dhalluin, P. Gentile, and P. Ferret, "Size effects in mechanical deformation and fracture of cantilevered silicon nanowires," Nano Lett., vol.9, no.2, pp. 525-529, Feb. 2009.
60. L. T. Ngo, D. Almecija, J. E. Sader, B. Daly, N. Petkov, J. D. Holmes, D. Erts, and J. J. Boland, "Ultimate-strength germanium nanowires," Nano Lett., vol.6, no.12, pp. 2964-2968, Dec. 2006.
61. H. Ni, X. D. Li, G. S. Cheng, and R. Klie, "Elastic modulus of singlecrystal GaN nanowires," J. Mater. Res., vol.21, no.11, pp. 2882-2887,Nov. 2006. (Pubitemid 44816720)
62. S. Hoffmann, F. Ostlund, J. Michler, H. J. Fan, M. Zacharias, S. H. Christiansen, and C. Ballif, "Fracture strength and Young?s modulus of ZnO nanowires," Nanotechnology, vol.18, no.20, p. 205 503, May 2007.
63. B. M. Wen, J. E. Sader, and J. J. Boland, "Mechanical properties of ZnO nanowires," Phys. Rev. Lett., vol.101, no.17, p. 175 502, Oct. 2008.
64. S. Barth, C. Harnagea, S. Mathur, and F. Rosei, "The elastic moduli of oriented tin oxide nanowires," Nanotechnology, vol.20, no.11, p. 115 705-9, Mar. 2009.
65. J. B. Yadav, R. B. Patil, R. K. Puri, and V. Puri, "Studies on spin coated PANI/PMMA composite thin film: Effect of post-deposition heating," Appl. Surf. Sci., vol.255, no.5, pp. 2825-2829, Dec. 2008.
66. Y. Mita, M. Sugiyama,M. Kubota, F. Marty, T. Bourouina, and T. Shibata, "Aspect ratio dependent scalloping attenuation in DRIE and an application to low-loss fiber-optical switches," in Proc. 19th IEEE Int. Conf. MEMS, Istanbul, Turkey, 2006, pp. 114-117.
67. M. S. Islam, S. Sharma, T. I. Kamins, and R. S. Williams, "Ultrahighdensity silicon nanobridges formed between two vertical silicon surfaces," Nanotechnology, vol.15, no.5, pp. L5-L8, May 2004.
68. R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett., vol.4, no.5, pp. 89-90, Mar. 1964.
69. L. Hu and G. Chen, "Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications," Nano Lett., vol.7, no.11, pp. 3249-3252, Nov. 2007.
70. Y. F. Huang, S. Chattopadhyay, Y. J. Jen, C. Y. Peng, T. A. Liu, Y. K. Hsu, C. L. Pan, H. C. Lo, C. H. Hsu, Y. H. Chang, C. S. Lee, K. H. Chen, and L. C. Chen, "Improved broadband and quasi-omnidirectional antireflection properties with biomimetic silicon nanostructures," Nat. Nanotechnol., vol.2, no.12, pp. 770-774, Dec. 2007.
71. Y. H. Pai, F. S. Meng, C. J. Lin, H. C. Kuo, S. H. Hsu, Y. C. Chang, and G. R. Lin, "Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate," Nanotechnology, vol.20, no.3, p. 7, Jan. 2009.
72. J. Zhu, Z. Yu, G. F. Burkhard, C.-M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, "Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays," Nano Lett., vol.9, no.1, pp. 279-282, Jan. 2009.
73. C. Lee, S. Y. Bae, S. Mobasser, and H. Manohara, "A novel silicon nanotips antireflection surface for the micro sun sensor," Nano Lett., vol.5, no.12, pp. 2438-2442, Dec. 2005.
74. P. N. Vinod, "The ohmic properties and current-voltage characteristics of the screen-printed silicon solar cells with porous silicon surface," Solid State Commun., vol. 149, no. 23/24, pp. 957-961, Jun. 2009.
75. J. Y. Yu, S. W. Chung, and J. R. Heath, "Silicon nanowires: Preparation,device fabrication, and transport proper ties," J. Phys. Chem. B, vol.104, no.50, pp. 11 864-11 870, Dec. 2000.
76. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dotz, M. Kastler, and A. Facchetti, "A high-mobility electron-transporting polymer for printed transistors," Nature, vol.457, no.7230, pp. 679-686, Feb. 2009.
77. S. Jiguet, A. Bertsch, H. Hofmann, and P. Renaud, "Conductive SU8 photoresist for microfabrication," Adv. Funct. Mater., vol.15, no.9, pp. 1511-1516, Sep. 2005.