Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 325-328

  Bradford, C ^a   Currran, A ^a   Balocchi, A ^a   Cavenett, B C ^a   Prior, K A ^a   Warburton, R J ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

A1. Etching; A1. Solubility; A3. MBE; A3. Quantum wells; B1. Sulphides; B2. Semiconducting II VI compounds

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SOLAR CELLS; SOLUBILITY;

CRYSTAL QUALITY; EPITAXIAL LIFT-OFF TECHNIQUE; SEMICONDUCTING II-VI COMPOUNDS; SULPHIDES;

HETEROJUNCTIONS;

EID: 18444415192     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.019     Document Type: Conference Paper

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