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Volumn 4, Issue 10, 2004, Pages 1953-1959

Fabricating semiconductor nano/microwires and transfer printing ordered arrays of them onto plastic substrates

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DRY ETCHING; ELASTOMERS; GALLIUM COMPOUNDS; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; PLASTIC PRODUCTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SUBSTRATES;

EID: 7544239134     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl048835l     Document Type: Article
Times cited : (182)

References (55)
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    • note
    • 2 etch mask in the etchant generated GaAs wires through the anisotropic etching. The resultant sample was rinsed with deionized water and ethanol, dried, and readied for transfer printing.
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    • note
    • 2 mask stripes, the GaAs wires could be released from the mother wafer by etching 0.71 μm of GaAs in thickness. If the polishing process thinned the GaAs wafer by an additional 1 μm, then a total 2 μm thick top layer of GaAs generates one layer of GaAs wires. Therefore, the GaAs wire arrays fabricated from one piece of GaAs wafer (10 cm in diameter and 450 μm in thickness) could print a plastic sheet over an area of 255 times larger than that of the mother GaAs wafer.


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