Heteroepitaxial growth dynamics of InP nanowires on silicon

Journal of Nanophotonics

Volumn 2, Issue 1, 2008, Pages

  Sarkar, Ataur ^a   Kimukin, Ibrahim ^a,b   Edgar, Christopher W ^a   Yi, Sungsoo ^c,d   Islam, M Saif ^a  

^a University of California Davis   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c AGILENT TECHNOLOGIES   (United States)

^d Philips Lumileds Lighting Company   (United States)

Author keywords

Dislocation; Equilibrium; Heterostructure; InP; Mismatch; Nanowire; Strain

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHASE EQUILIBRIA; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON; STRAIN;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CRITICAL DIAMETER; DISLOCATION LINES; INTERFACIAL PLANES; LATTICE-MISMATCHED; MATERIAL SYSTEMS; MISMATCH; NANOWIRE HETEROSTRUCTURES;

NANOWIRES;

EID: 69549141681     PISSN: None     EISSN: 19342608     Source Type: Journal    
DOI: 10.1117/1.2839443     Document Type: Article

References (35)

1. E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, "Equilibrium limits of coherency in strained nanowire heterostructures, " J. Appl. Phys. 97, 114325 (2005) [doi:10.1063/1.1903106].
2. E. Ertekin, P. A. Greaney, T. D. Sands, and D. C. Chrzan, "Equilibrium analysis of lattice-mismatched nanowire heterostructures, " Proc. MRS 737, F10.4 (2003).
3. A. Krost, F. Heinrichsdorff, D. Bimberg, and H. Cerva, "InP on Si(111): accommodation of lattice mismatch and structural properties," Appl. Phys. Lett. 64, 769-771 (1994) [doi:10.1063/1.111007].
4. M. S. Gudiksen, L. C. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, "Growth of nanowire supperlattice structures for nanoscale photonics and electronics," Nature 415, 617-620 (2002) [doi:10.1038/415617a]. (Pubitemid 34136383)
5. J. Geske, Y. L. Okuno, J. E. Bowers, and V. Jayaraman, "Vertical and lateral heterogeneous integration," Appl. Phys. Lett. 79, 1760-1762 (2001) [doi:10.1063/1.1404399]. (Pubitemid 33596893)
6. E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, "Extreme selectivity in the lift-off of epitaxial GaAs films," Appl. Phys. Lett. 51, 2222-2224 (1987) [doi:10.1063/1.98946].
7. S. F. Fang, K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, and N. Otsuka, "Gallium arsenide and other compound semiconductors on silicon," J. Appl. Phys. 68, R31-R58 (1990) [doi:10.1063/1.346284].
8. R. Wagner, Whisker Technology, Wiley, New York, NY, USA (1970).
9. J. Hirth and J. Lothe, Theory of Dislocations, Krieger, Malabar, FL, USA (1992).
10. J. Johanssson, C. P. T. Svensson, T. Martensson, L. Samuelson, and W. Seifert, "Mass transport model for semiconductor nanowire growth," J. Phys. Chem. B 109, 13567-13571 (2005) [doi:10.1021/jp051702j]. (Pubitemid 41083945)
11. W. Seifert, M. Borgström, K. Deppert, K. A. Dick, J. Johansson, M. W. Larsson, T. Mårtensson, N. Sköld, C. P. T. Svensson, B. A. Wacaser, L. R. Wallenberg, and L. Samuelson, "Growth of one-dimensional nanostructures in MOVPE," J. Cryst. Growth 272, 211-220 (2004) [doi:10.1016/j.jcrysgro.2004.09.023].
12. U. Krishnamachari, M. Borgstrom, B. J. Ohlsson, N. Panev, L. Samuelson, W. Seifert, M. W. Larsson, and L. R. Wallenberg, "Defect-free InP nanowires grown in [001] direction on InP (001)," Appl. Phys. Lett. 85, 2077-2079 (2004) [doi:10.1063/1.1784548].
13. N. P. Kobayashi, S. Y. Wang, C. Santori, and R. S. Williams, "Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces," Appl. Phys. A 85, 1-6 (2006) [doi:10.1007/s00339-006-3663-4]. (Pubitemid 44259592)
14. L. J. Lauhon, M. S. Gudiksen, and C. M. Lieber, "Semiconductor nanowire heterostructures," Phil. Trans. R. Soc. Lond. A 362, 1247-1260 (2004) [doi:10.1098/rsta.2004.1377]. (Pubitemid 38799679)
15. I. Kimukin, C. D. Johns, C. W. Edgar, M. Saif Islam, and S. S. Yi, "Unusual growth of InP nanowires grown on silicon surfaces," Proc. IEEE Conf. Nanotech. 2, 620-623 (2006). (Pubitemid 351576494)
16. J. W. Matthews, "Defects associated with the accommodation of misfit between crystals," J. Vac. Sci. Technol. 2, 126-133 (1975) [doi:10.1116/1.568741].
17. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers I. misfit dislocations," J. Cryst. Growth 27, 118-125 (1974).
18. S. Raychaudhury and E. T. Yu, "Critical dimensions in coherently strained coaxial nanowire heterostructure," J. Appl. Phys. 99, 114308 (2006) [doi:10.1063/1.2202697].
19. Y-K. Tseng, C-T. Chia, C-Y. Tsay, L-J. Lin, H-M. Cheng, C-Y. Kwo, and I-C. Chen, "Growth of epitaxial needlelike ZnO nanowires on GaN films," J. Electrochem. Soc. 152, G95-G98 (2005) [doi:10.1149/1.1825953]. (Pubitemid 40156815)
20. R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett. 4, 89-90 (1964) [doi:10.1063/1.1753975].
21. K. A. Dick, K. Deppert, M. W. Larsson, T. Mårtensson, W. Seifert, L. R. Wallenberg, and L. Samuelson, "Synthesis of branched nanotrees by controlled seeding of multiple branching events," Nature Mater. 3, 380-384 (2004) [doi:10.1038/nmat1133].
22. K. Haraguchi, K. Hiruma, K. Hosomi, M. Shirai, and T. Katsuyama, "Growth mechanism of planar-type GaAs nanowhiskers," J. Vac. Sci. Tech. B 15, 1685-1687 (1997) [doi:10.1116/1.589355]. (Pubitemid 127604308)
23. J. Noborisaka, J. Motohisa, and T. Fukui, "Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy," Appl. Phys. Lett. 86, 213102 (2005) [doi:10.1063/1.1935038].
24. H. Pan, S. Lim, C. Poh, H. Sun, X. Wu, Y. Feng, and J. Lin, "Growth of silicon nanowires by thermal evaporation," Nanotechnology 16, 417-421 (2005) [doi:10.1088/0957-4484/16/4/014]. (Pubitemid 41236997)
25. S. D. Hutagalung, A. F. A. Aziz, and A. K. Yaacob, "Growth of crooked silicon nanowires by carbothermal evaporation," Proc. IEEE Conf. Nanotech. 3, 827-831 (2007).
26. J. B. Hannon, S. Kodambaka, F. M. Ross, and R. M. Tromp, "The influence of the surface migration of gold on the growth of silicon nanowires," Nature 440, 69-71 (2006) [doi:10.1038/nature04574]. (Pubitemid 43336267)
27. M. C. Plante and R. R. LaPierre, "Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy," J. Cryst. Growth 286, 394-399 (2006) [doi:10.1016/j.jcrysgro.2005.10.024]. (Pubitemid 43003805)
28. L. C. Chuang, M. Moewe, C. Chase, N. P. Kobayashi, C. Chang-Hasnain, and S. Crankshaw, "Critical diameter for III-V nanowires grown on lattice-mismatched substrates," Appl. Phys. Lett. 90, 043115 (2007) [doi: 10.1063/1.2436655].
29. J. Wu, J. Li, G. Cong, H. Wei, P. Zhang, W. Hu, X. Liu, Q. Zhu, Z. Wang, Q. Jia, and L. Guo, "Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates," Nanotechnology 17, 1251-1254 (2006) [doi:10.1088/0957-4484/17/5/015]. (Pubitemid 43269412)
30. S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, "Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy," Thin Solid Films 464-465, 244-247 (2004) [doi:10.1016/j.tsf.2004.06.101].
31. Y. Watanabe, H. Hibino, S. Bhunia, K. Tateno, and T. Sekiguchi, "Site-controlled InP nanowires grown on patterned Si substrates," Physica E 24, 133-137 (2004) [doi:10.1016/j.physe.2004.04.002].
32. T. Akiyama, K. Sano, K. Nakamura, and T. Ito, "An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires," Jpn. J. Appl. Phys. 45, L275-L278 (2006) [doi:10.1143/JJAP.45.L275].
33. F. M. Ross, J. Tersoff, and M. C. Reuter, "Sawtooth faceting in silicon nanowires," Phys. Rev. Lett. 95, 146104 (2005) [doi:10.1103/ PhysRevLett.95.146104].
34. H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Y. Kim, X. Zhang, Y. Guo, and J. Zou, "Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process," Nano Lett. 7, 921-926 (2007) [doi:10.1021/ nl062755v]. (Pubitemid 46717734)
35. Y. N. Guo, J. Zou, M. Paladugu, H. Wang, Q. Gao, H. H. Tan, and C. Jagadish, "Structural characteristics of GaSb/GaAs nanowire heterostructures grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 89, 231917 (2006) [doi: 10.1063/1.2402234].