Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate

Nanotechnology

Volumn 20, Issue 3, 2009, Pages

  Pai, Yi Hao ^a   Meng, Fan Shuen ^a   Lin, Chun Jung ^a   Kuo, Hao Chung ^b   Hsu, Shih Hsin ^c   Chang, Yia Chung ^c   Lin, Gong Ru ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; LIGHT EMISSION; LIGHT REFRACTION; LIGHT SOURCES; LUMINESCENCE; OPTICAL PROPERTIES; OXYGEN; PHOTORESISTS; REFLECTION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SURFACE STRUCTURE;

CONSECUTIVE PEAKS; GREEN LUMINESCENCES; HIGH ASPECT RATIOS; INFRARED WAVELENGTHS; MIXED STRUCTURES; OXYGEN DEFECTS; ROUGHENED SURFACES; SI BASED; SI NANO PILLARS; SI SUBSTRATES;

SILICON WAFERS;

NANOPARTICLE; NANOPILLAR; NICKEL; QUANTUM DOT; SILICON; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; ENERGY TRANSFER; LIGHTNING; LUMINESCENCE; PRIORITY JOURNAL; REFRACTION INDEX; SURFACE PROPERTY;

EID: 58149260306     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/3/035303     Document Type: Article

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