The electronic properties of the interface structure between ZnO and amorphous HfO2

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4823-4826

  Ryu, Byungki ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

First principles calculations; HfO2; Interface; O vacancy; ZnO

Indexed keywords

ATOMIC STRUCTURE; BAND ALIGNMENTS; CHARGE TRAP; CONDUCTION BAND OFFSET; DEFECT LEVELS; DENSITY-FUNCTIONAL CALCULATIONS; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES CALCULATIONS; GATE OXIDE; HOLE CONDUCTION; INTERFACE STRUCTURES; POTENTIAL BARRIERS; ZNO;

ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; OXYGEN; OXYGEN VACANCIES; ZINC OXIDE;

HAFNIUM COMPOUNDS;

EID: 74349114948     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.184     Document Type: Article

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