Defect generation at charge-passivated Si-SiO2 interfaces by ultraviolet light

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1996-2004

  Black, Lachlan E ^a   McIntosh, Keith R ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Photovoltaic cell radiation effects; semiconductor device radiation effects; semiconductorinsulator interfaces; UV radiation effects

Indexed keywords

DEFECT GENERATION; HIGH EFFICIENCY; INTERFACE DEFECTS; KELVIN PROBE MEASUREMENTS; MOS STRUCTURE; PHOTOCONDUCTANCE; PHOTON ENERGY; POSITIVE SURFACE CHARGE; SEMICONDUCTOR DEVICE RADIATION EFFECTS; SEMICONDUCTOR-INSULATOR INTERFACE; SURFACE RECOMBINATIONS; ULTRA-VIOLET LIGHT; UV RADIATION;

CHARGED PARTICLES; PHOTOELECTROCHEMICAL CELLS; PHOTONS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON COMPOUNDS; SILICON OXIDES; SURFACE CHARGE; SURFACE DEFECTS; ULTRAVIOLET RADIATION;

RADIATION EFFECTS;

EID: 77955145126     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051199     Document Type: Article

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