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Volumn 83, Issue 10, 1998, Pages 5289-5294
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A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0342852509
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.367353 Document Type: Article |
Times cited : (4)
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References (19)
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