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Volumn 83, Issue 10, 1998, Pages 5289-5294

A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation

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Indexed keywords


EID: 0342852509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367353     Document Type: Article
Times cited : (4)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.