Influence of H 2-annealing on the hydrogen distribution near SiO 2/Si(100) interfaces revealed by in situ nuclear reaction analysis

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4320-4329

  Wilde, Markus ^a   Matsumoto, Masuaki ^a   Fukutani, Katsuyuki ^a   Liu, Ziyuan ^b   Ando, Koichi ^b   Kawashima, Yoshiya ^b   Fujieda, Shinji ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL INTERACTIONS; ELECTRONIC DEVICE; HYDROGEN DESORPTION; HYDROGEN DISTRIBUTION; HYDROGEN TRAP; IN-SITU; ION BEAM IRRADIATION; NATIVE OXIDES; NUCLEAR REACTION ANALYSIS; OXIDATION CONDITIONS; OXIDE TRAPS; SI(1 0 0);

ANNEALING; DANGLING BONDS; DEGRADATION; DEPTH PROFILING; DESORPTION; ION BEAMS; IRRADIATION; OXIDE FILMS; SILICON;

HYDROGEN;

EID: 18744411779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509084     Document Type: Article

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