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Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6107-6116

Analysis of the kinetics for interface state generation following hole injection

(4) Zhang, J F a Zhao, C Z a Groeseneken, G b Degraeve, R b

a LIVERPOOL JOHN MOORES UNIVERSITY (United Kingdom)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE TRAPS; IRRADIATION; MOS DEVICES;

HOLE INJECTION;

INTERFACES (MATERIALS);

EID: 0038311993 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1567059 Document Type: Article

Times cited : (25)

References (48)

1
- 0027147283
- W. Chen, A. Balasinski, and T. P. Ma, IEEE Trans. Electron Devices 40, 187 (1993).
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 187
- Chen, W.¹ Balasinski, A.² Ma, T.P.³

2
- 0029373408
- G. Groeseneken, R. Bellens, G. van den bosch, and H. E. Maes, Semicond. Sci. Technol. 10, 1208 (1995).
- (1995) Semicond. Sci. Technol. , vol.10 , pp. 1208
- Groeseneken, G.¹ Bellens, R.² Van den Bosch, G.³ Maes, H.E.⁴

3
- 0012278046
- M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
- (1989) Adv. Phys. , vol.38 , pp. 367
- Kirton, M.J.¹ Uren, M.J.²

4
- 0024176412
- N. S. Saks, C. M. Dozier, and D. B. Brown, IEEE Trans. Nucl. Sci. 35, 1168 (1988).
- (1988) IEEE Trans. Nucl. Sci. , vol.35 , pp. 1168
- Saks, N.S.¹ Dozier, C.M.² Brown, D.B.³

5
- 33747312283
- D. B. Brown and N. S. Saks, J. Appl. Phys. 70, 3734 (1991).
- (1991) J. Appl. Phys. , vol.70 , pp. 3734
- Brown, D.B.¹ Saks, N.S.²

6
- 0000181148
- T. R. Oldham, F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, Semicond. Sci. Technol. 4, 986 (1989).
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 986
- Oldham, T.R.¹ McLean, F.B.² Boesch H.E., Jr.³ McGarrity, J.M.⁴

7
- 21544467967
- D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 2342
- DiMaria, D.J.¹ Stasiak, J.W.²

8
- 21544458715
- D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 3367
- DiMaria, D.J.¹ Cartier, E.² Arnold, D.³

9
- 0020751109
- S. K. Lai, J. Appl. Phys. 54, 2540 (1983).
- (1983) J. Appl. Phys. , vol.54 , pp. 2540
- Lai, S.K.¹

10
- 0012717733
- D. J. DiMaria, D. A. Buchanan, J. H. Stathis, and R. E. Stahlbush, J. Appl. Phys. 77, 2032 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 2032
- DiMaria, D.J.¹ Buchanan, D.A.² Stathis, J.H.³ Stahlbush, R.E.⁴

11
- 0001364944
- S. J. Wang, J. M. Sung, and S. A. Lyon, Appl. Phys. Lett. 52, 1431 (1988).
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1431
- Wang, S.J.¹ Sung, J.M.² Lyon, S.A.³

12
- 0001535272
- D. A. Buchanan, Appl. Phys. Lett. 65, 1257 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1257
- Buchanan, D.A.¹

13
- 0025682742
- R. E. Stahlbush, B. J. Mrstik, and R. K. Lawrence, IEEE Trans. Nucl. Sci. 37, 1641 (1990).
- (1990) IEEE Trans. Nucl. Sci. , vol.37 , pp. 1641
- Stahlbush, R.E.¹ Mrstik, B.J.² Lawrence, R.K.³

14
- 21544471157
- R. E. Stahlbush, A. H. Edwards, D. L. Griscom, and B. J. Mrstik, J. Appl. Phys. 73, 658 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 658
- Stahlbush, R.E.¹ Edwards, A.H.² Griscom, D.L.³ Mrstik, B.J.⁴

15
- 0027853279
- N. S. Saks, R. B. Klein, R. E. Stahlbush, B. J. Mrstik, and R. W. Rendell, IEEE Trans. Nucl. Sci. 40, 1341 (1993).
- (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1341
- Saks, N.S.¹ Klein, R.B.² Stahlbush, R.E.³ Mrstik, B.J.⁴ Rendell, R.W.⁵

16
- 0033900450
- J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 47, 378 (2000).
- (2000) IEEE Trans. Electron Devices , vol.47 , pp. 378
- Zhang, J.F.¹ Sii, H.K.² Groeseneken, G.³ Degraeve, R.⁴

17
- 0009047152
- W. D. Zhang, J. F. Zhang, M. J. Uren, G. Groeseneken, R. Degraeve, M. Lalor, and D. Burton, Appl. Phys. Lett. 79, 3092 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3092
- Zhang, W.D.¹ Zhang, J.F.² Uren, M.J.³ Groeseneken, G.⁴ Degraeve, R.⁵ Lalor, M.⁶ Burton, D.⁷

18
- 0001767480
- I. S. Al-kofahi, J. F. Zhang, and G. Groeseneken, J. Appl. Phys. 81, 2686 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 2686
- Al-Kofahi, I.S.¹ Zhang, J.F.² Groeseneken, G.³

19
- 0035397604
- C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, J. Appl. Phys. 90, 328 (2001).
- (2001) J. Appl. Phys. , vol.90 , pp. 328
- Zhao, C.Z.¹ Zhang, J.F.² Groeseneken, G.³ Degraeve, R.⁴ Ellis, J.N.⁵ Beech, C.D.⁶

20
- 0029491546
- D. M. Fleetwood, W. L. Warren, J. R. Schwank, P. S. Winokur, M. R. Shaneyfelt, and L. C. Riewe, IEEE Trans. Nucl. Sci. 42, 1698 (1995).
- (1995) IEEE Trans. Nucl. Sci. , vol.42 , pp. 1698
- Fleetwood, D.M.¹ Warren, W.L.² Schwank, J.R.³ Winokur, P.S.⁴ Shaneyfelt, M.R.⁵ Riewe, L.C.⁶

21
- 0000229091
- J. F. Zhang, H. K. Sii, R. Degraeve, and G. Groeseneken, J. Appl. Phys. 87, 2967 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 2967
- Zhang, J.F.¹ Sii, H.K.² Degraeve, R.³ Groeseneken, G.⁴

22
- 0021201529
- G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, IEEE Trans. Electron Devices ED-31, 42 (1984).
- (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 42
- Groeseneken, G.¹ Maes, H.E.² Beltran, N.³ De Keersmaecker, R.F.⁴

23
- 0003610719
- Wiley, New York
- E. H. Nicollian and J. R. Brews, Metal Oxide Semiconductor Physics and Technology (Wiley, New York, 1982).
- (1982) Metal Oxide Semiconductor Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

24
- 0000254929
- D. M. Fleetwood and N. S. Saks, J. Appl. Phys. 79, 1583 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 1583
- Fleetwood, D.M.¹ Saks, N.S.²

25
- 0002840375
- J. Cai and C. T. Sah, IEEE Electron Device Lett. 20, 60 (1999).
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 60
- Cai, J.¹ Sah, C.T.²

26
- 79956019975
- N. S. Saks, M. G. Ancona, and R. W. Rendell, Appl. Phys. Lett. 80, 3219 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3219
- Saks, N.S.¹ Ancona, M.G.² Rendell, R.W.³

27
- 0017924811
- R. C. Hughes, Solid-State Electron. 21, 251 (1978).
- (1978) Solid-State Electron. , vol.21 , pp. 251
- Hughes, R.C.¹

28
- 0035368031
- J. F. Zhang, H. K. Sii, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 48, 1127 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 1127
- Zhang, J.F.¹ Sii, H.K.² Groeseneken, G.³ Degraeve, R.⁴

29
- 0001288477
- H. S. Witham and P. M. Lenahan, Appl. Phys. Lett. 51, 1007 (1987).
- (1987) Appl. Phys. Lett. , vol.51 , pp. 1007
- Witham, H.S.¹ Lenahan, P.M.²

30
- 84934588160
- W. C. Johnson, IEEE Trans. Nucl. Sci. NS-22, 2144 (1975).
- (1975) IEEE Trans. Nucl. Sci. , vol.NS-22 , pp. 2144
- Johnson, W.C.¹

31
- 36449003730
- J. M. M. de Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2428
- De Nijs, J.M.M.¹ Druijf, K.G.² Afanas'ev, V.V.³ Van der Drift, E.⁴ Balk, P.⁵

32
- 0001518203
- B. J. Mrstik, V. V. Afanas'ev, A. Stesmans, P. J. McMarr, and R. K. Lawrence, J. Appl. Phys. 85, 6577 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 6577
- Mrstik, B.J.¹ Afanas'ev, V.V.² Stesmans, A.³ McMarr, P.J.⁴ Lawrence, R.K.⁵

33
- 0025660053
- M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, and F. W. Sexton, IEEE Trans. Nucl. Sci. 37, 1632 (1990).
- (1990) IEEE Trans. Nucl. Sci. , vol.37 , pp. 1632
- Shaneyfelt, M.R.¹ Schwank, J.R.² Fleetwood, D.M.³ Winokur, P.S.⁴ Hughes, K.L.⁵ Sexton, F.W.⁶

34
- 0001763520
- J. F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 71, 725 (1992).
- (1992) J. Appl. Phys. , vol.71 , pp. 725
- Zhang, J.F.¹ Taylor, S.² Eccleston, W.³

35
- 36449001442
- J. F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 71, 5989 (1992).
- (1992) J. Appl. Phys. , vol.71 , pp. 5989
- Zhang, J.F.¹ Taylor, S.² Eccleston, W.³

36
- 0002496114
- K. L. Ngai, Comments Solid State Phys. 9, 127 (1979).
- (1979) Comments Solid State Phys. , vol.9 , pp. 127
- Ngai, K.L.¹

37
- 0004223515
- Chelsea Dielectric Press, London
- A. K. Jonschler, Dielectric Relaxation in Solids (Chelsea Dielectric Press, London, 1983).
- (1983) Dielectric Relaxation in Solids
- Jonschler, A.K.¹

38
- 0033328605
- K. Vanheusden, P. P. Korambath, H. A. Kurtz, S. P. Karna, D. M. Fleetwood, W. M. Shedd, and R. D. Pugh, IEEE Trans. Nucl. Sci. 46, 1562 (1999).
- (1999) IEEE Trans. Nucl. Sci. , vol.46 , pp. 1562
- Vanheusden, K.¹ Korambath, P.P.² Kurtz, H.A.³ Karna, S.P.⁴ Fleetwood, D.M.⁵ Shedd, W.M.⁶ Pugh, R.D.⁷

39
- 85058248748
- L. Lundkvist, I. Lundstrom, and C. Svensson, Solid-State Electron. 16, 811 (1973).
- (1973) Solid-State Electron. , vol.16 , pp. 811
- Lundkvist, L.¹ Lundstrom, I.² Svensson, C.³

40
- 0001456937
- J. F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 72, 1429 (1992).
- (1992) J. Appl. Phys. , vol.72 , pp. 1429
- Zhang, J.F.¹ Taylor, S.² Eccleston, W.³

41
- 0032685812
- A. H. Edwards and W. B. Fowler, Microelectron. Reliab. 39, 3 (1999).
- (1999) Microelectron. Reliab. , vol.39 , pp. 3
- Edwards, A.H.¹ Fowler, W.B.²

42
- 0032320870
- W. B. Fowler and A. H. Edwards, Radiat. Eff. Defects Solids 146, 11 (1998).
- (1998) Radiat. Eff. Defects Solids , vol.146 , pp. 11
- Fowler, W.B.¹ Edwards, A.H.²

43
- 0031550083
- W. B. Fowler and A. H. Edwards, J. Non-Cryst. Solids 222, 33 (1997).
- (1997) J. Non-Cryst. Solids , vol.222 , pp. 33
- Fowler, W.B.¹ Edwards, A.H.²

44
- 0035723157
- S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 48, 2086 (2001).
- (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 2086
- Rashkeev, S.N.¹ Fleetwood, D.M.² Schrimpf, R.D.³ Pantelides, S.T.⁴

45
- 36549091646
- G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. 49, 348 (1986).
- (1986) Appl. Phys. Lett. , vol.49 , pp. 348
- Gerardi, G.J.¹ Poindexter, E.H.² Caplan, P.J.³ Johnson, N.M.⁴

46
- 0021427238
- P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).
- (1984) J. Appl. Phys. , vol.55 , pp. 3495
- Lenahan, P.M.¹ Dressendorfer, P.V.²

47
- 0000119442
- A. Stesmans and V. V. Afanas'ev, Phys. Rev. B 57, 10 030 (1998).
- (1998) Phys. Rev. B , vol.57 , pp. 10030
- Stesmans, A.¹ Afanas'ev, V.V.²

48
- 0037803138
- K. L. Brower, Semicond. Sci. Technol. 4, 970 (1989).
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 970
- Brower, K.L.¹

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