Interface traps creation by sub-band gap irradiation in silicon dioxide on silicon without applied electric field

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2509-2512

  Zhong, Lei ^a,b   Shimura, Fumio ^a,c  

^a North Carolina State University   (United States)

^b Nissei Bldg   (Japan)

^c SHIZUOKA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042941273     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361179     Document Type: Article

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