Growth of low dislocation density GaN using transition metal nitride masking layers

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 268-271

  Moram, M A ^a   Kappers, M J ^a   Barber, Z H ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; DEPOSITION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RESIDUAL STRESSES; TRANSITION METAL COMPOUNDS;

COMPRESSIVE RESIDUAL STRESS; DISLOCATION DENSITIES; SELECTIVE EPITAXY; TRANSITION METAL NITRIDES;

FILM GROWTH;

EID: 33846428091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.027     Document Type: Article

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