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Volumn 91, Issue 23, 2007, Pages

Effect of threading defects on InGaNGaN multiple quantum well light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

EPITAXIAL WAFERS; THREADING DEFECT (TD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 36849041464 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2822395 Document Type: Article

Times cited : (93)

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