Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire

Journal of Crystal Growth

Volumn 312, Issue 3, 2010, Pages 363-367

  Kappers, M J ^a   Moram, M A ^a   Sridhara Rao, D V ^a   McAleese, C ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A3: Metalorganic vapour phase epitaxy; B1: Nitrides; B2: Semiconducting III V materials

Indexed keywords

A3: METALORGANIC VAPOUR PHASE EPITAXY; ALN; ALN BUFFER; C-PLANE SAPPHIRE; FULL WIDTHS AT HALF MAXIMUMS; GAN CRYSTALS; GAN FILM; GAN GROWTH; GAN ISLANDS; HIGH RESOLUTION X RAY DIFFRACTION; HIGH TEMPERATURE; HIGHER TEMPERATURES; IN-SITU; INITIAL STAGES; ISLAND DENSITY; LOW-DISLOCATION DENSITY; METAL-ORGANIC VAPOUR PHASE EPITAXY; REACTOR PRESSURES; REDUCED PRESSURE; SEMI CONDUCTING III-V MATERIALS; SILANE TREATMENT; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; COALESCENCE; CORUNDUM; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; EPITAXIAL LAYERS; GALLIUM ALLOYS; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTICAL WAVEGUIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SILANES; SILICON NITRIDE; SINGLE CRYSTALS; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 72549109959     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.014     Document Type: Article

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