Insights into the growth mechanism of InxGa1-xN epitaxial nanostructures formed using a silane predose

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3459-3465

  Oliver, R A ^a   Van der Laak, N K ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Characterization; A1. Nanostructures; A3. Metal organic vapour phase epitaxy; B1. Nitrides

Indexed keywords

GROWTH MECHANISMS;

EID: 46749145674     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.001     Document Type: Article

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