Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging

Materials Science and Technology

Volumn 22, Issue 11, 2006, Pages 1352-1358

  Trager Cowan, C ^a   Sweeney, F ^a   Winkelmann, A ^b   Wilkinson, A J ^c   Trimby, P W ^d   Day, A P ^d   Gholinia, A ^d   Schmidt, N H ^d   Parbrook, P J ^e   Watson, I M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Max Planck lnstitut für Mikrostrukturphysik ^*  (Germany)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d HKL Technology ApS   (Denmark)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Channelling; Diffraction; Dislocations; EBSD; Forescatter; Nitrides; SEM; Tilt

Indexed keywords

BACKSCATTERING; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; IMAGE ANALYSIS; IMAGING SYSTEMS; NITRIDES;

CONTRAST IMAGING; ELECTRON BACKSCATTER DIFFRACTION (EBSD); FORESCATTER; IMAGE TILT;

THIN FILMS;

EID: 33751380250     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/174328406X130957     Document Type: Article

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