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Volumn 95, Issue 5, 2009, Pages

Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

(10) Redondo Cubero, A a,b Lorenz, K c Gago, R b,d Franco, N c Fernandez Garrido S a Smulders, P J M e Muoz, E a Calleja, E a Watson, I M f Alves, E c

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b CENTRO DE MICROANÁLISIS DE MATERIALES (Spain)

c INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

d INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

e UNIVERSITY OF GRONINGEN (Netherlands)

f UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE ANALYSIS; BEAM ENERGIES; ENCOUNTER PROBABILITY; GAN-BASED HETEROSTRUCTURES; ION CHANNELING; ION ENERGIES; MONTE CARLO SIMULATION; STEERING EFFECTS; STRAIN STATE;

CARRIER CONCENTRATION; COMPUTER SIMULATION LANGUAGES; CRYSTALS; GALLIUM ALLOYS; GALLIUM NITRIDE; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM;

IONS;

EID: 68349131535 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3202421 Document Type: Article

Times cited : (8)

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