Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6993, Issue , 2008, Pages

  Watson, Ian M ^a   Xiong, Chang ^a   Gu, Erdan ^a   Dawson, Martin D ^a   Rizzi, Francesco ^b   Bejtka, Katarzyna ^a   Edwards, Paul R ^a   Martin, Robert W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

Author keywords

Aluminium indium nitride; Etch selectivity; Gallium nitride; Microbridge; Microcavity; Microelectromechanical systems; Plasma etching; Polarity effects; Wet etching

Indexed keywords

ARGON; CHLORINE; COMPOSITE MICROMECHANICS; COMPUTER NETWORKS; CUBIC BORON NITRIDE; DISKS (MACHINE COMPONENTS); DISKS (STRUCTURAL COMPONENTS); DRY ETCHING; ELECTROCHEMICAL SENSORS; EPITAXIAL LAYERS; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS MIXTURES; INDUCTIVELY COUPLED PLASMA; INERT GASES; INORGANIC ACIDS; MACHINING; MEMS; MICROANALYSIS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; NITRIC ACID; NITRIDES; PHOTODETECTORS; PHOTORESISTS; PIGMENTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SOLUTIONS; TECHNOLOGY;

(1 1 0) SURFACE; (OTDR) TECHNOLOGY; 3 DIMENSIONAL; AQUEOUS SOLUTIONS; ARGON GAS MIXTURES; DEVICE STRUCTURES; ETCH RATES; INDUCTIVELY COUPLED PLASMA ETCHING (ICP); LATERAL ETCHING; LATTICE MATCHING; LOCAL STRAINS; MESA SIDEWALLS; MICROBRIDGES; MOLAR CONCENTRATIONS; MOLE FRACTIONS; NITRIDE MATERIALS; PHOTONIC; REFLUXING; SACRIFICIAL LAYERS; SELECTIVE WET ETCHING; SENSITIVE PROBE; TRILAYERS;

WET ETCHING;

EID: 44949166706     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.781881     Document Type: Conference Paper

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