Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates

Journal of Physics D: Applied Physics

Volumn 43, Issue 29, 2010, Pages

  Baik, Kwang Hyeon ^a   Seo, Yong Gon ^a   Kim, Jaebum ^a   Hwang, Sung Min ^a   Lim, Wantae ^b   Chang, C Y ^b   Pearton, S J ^b   Ren, F ^b   Jang, Soohwan ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b University of Florida   (United States)

^c Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; C-AXIS DIRECTION; NON-POLAR; PLANE SAPPHIRE; SPECIFIC CONTACT RESISTANCES; TI/AL/NI/AU; TRANSMISSION LINE METHODS;

ELECTRIC CONTACTORS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; OHMIC CONTACTS; SAPPHIRE;

GALLIUM ALLOYS;

EID: 77954490717     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/29/295102     Document Type: Article

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