N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2948-2952

  Sun, Qian ^a   Suk Cho, Yong ^a   Kong, Bo Hyun ^b   Koun Cho, Hyung ^b   Shine Ko, Tsung ^a   Yerino, Christopher D ^a   Lee, In Hwan ^a,c   Han, Jung ^a  

^a Yale University   (United States)

^b Sungkyunkwan University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

A1. N face; A1. Nitridation; A1. Nucleation evolution; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

A1. N-FACE; A1. NITRIDATION; A1. NUCLEATION EVOLUTION; A1. X-RAY DIFFRACTION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES;

CORUNDUM; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDATION; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM;

EID: 65749090410     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.059     Document Type: Article

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