Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal-insulator-semiconductor structures

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 371, Issue 3, 2007, Pages 249-253

  Wang, M J ^a   Shen, B ^a   Wang, Y ^a   Huang, S ^a   Xu, F J ^a   Xu, J ^a   Qin, Z X ^a   Yang, Z J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

2DEG; AlxGa1 xN GaN; SiNx; Tunneling

Indexed keywords

CAPACITANCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON;

ALXGA1-XN/GAN; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRON TRANSFER; ELECTRON TRANSFER EFFECTS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; SINX; TWO-DIMENSIONAL ELECTRON GAS (2DEG); VARIABLE CAPACITOR;

TWO DIMENSIONAL ELECTRON GAS;

EID: 35448941952     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.06.026     Document Type: Article

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