ICP-induced defects in GaN characterized by capacitance analysis

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1677-1681

  Lan, Wen How ^a   Huang, Kuo Chin ^b   Huang, Kai Feng ^b  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Current transport mechanism; GaN; ICP; Schottky diodes

Indexed keywords

ANNEALING; CAPACITANCE; ETCHING; INDUCTIVELY COUPLED PLASMA; SCHOTTKY BARRIER DIODES;

ANNEALING PARAMETERS; CURRENT TRANSPORT MECHANISM; GAN; INTERFACIAL STATES DENSITY;

GALLIUM NITRIDE;

EID: 33751236817     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.10.005     Document Type: Article

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