A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 115-120

  Lu, Jing ^a   Wang, Yan ^a   Ma, Long ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Error analysis; GaN HEMT; Modeling; Parameter extraction

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; ERROR ANALYSIS; GALLIUM NITRIDE; PARAMETER EXTRACTION;

FEEDBACK INTRINSIC RESISTANCES; GAN HEMT; SIMULATED SMALL-SIGNAL S-PARAMETERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36248968146     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.009     Document Type: Article

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