Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 470-476

  Rajagopal Reddy, V ^a   Koteswara Rao, P ^a  

^a UNIVERSITY OF MYSORE   (India)

Author keywords

Auger electron microscopy; Cu Au Schottky diode; Electrical and structural properties; X ray diffraction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIZING; OPTICAL DESIGN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR METAL BOUNDARIES; X RAY ANALYSIS;

ANNEALING TEMPERATURE (TA); AS-DEPOSITED; AUGER ELECTRON SPECTROSCOPY (AES); CAPACITANCE-VOLTAGE (C-V); CURRENT VOLTAGE; ELECTRICAL AND STRUCTURAL PROPERTIES; METALLIZATION; SCHOTTKY CONTACTS; SCHOTTKY-BARRIER HEIGHT (SBH); X RAY DIFFRACTION (XRD);

ANNEALING;

EID: 47049087296     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.08.006     Document Type: Article

References (23)

1. Chen L.C., Hsu C.Y., Lan W.H., and Teng S.Y. Solid State Electron. 47 (2003) 1843
2. Werner R., Reinhardt M., Emmerling M., Forchel A., Harle V., and Bazhenov A. Physica E 7 (2000) 915
3. Flannery L.B., Harrison I., Lacklison D.E., Dykeman R.I., Cheng T.S., and Foxon C.T. Mater. Sci. Eng. B 50 (1997) 307
4. Brown J., Borges R., Piner E., Vescan A., Singhal S., and Therrien R. Solid State Electron. 46 (2002) 1535
5. Moon J., Micovic M., Kurdoghlian A., Janke P., Hashimoto P., Wong W., McCray L., and Nguyen C. IEEE Electron. Dev. Lett. 23 (2002) 637
6. Mistele D. Mater. Sci. Eng. B 93 (2002) 107
7. Pearton S. Mater. Sci. Eng. B 82 (2001) 227
8. Hayes J.R., Kim D.-W., Meidia H., and Mahajan S. Acta Mater. 51 (2003) 653
9. Wang J., Zhao D.G., Sun Y.P., Duan L.H., Wang Y.T., Zhang S.M., Yang H., Zhou S., and Wu M. J. Phys. D: Appl. Phys. 36 (2003) 1018
10. Akkal B., Benamara Z., Abid H., Talbi A., and Gruzza B. Mater. Chem. Phys. 85 (2004) 27
11. Khanna R., Pearton S.J., Ren F., and Kravchenko I. Appl. Surf. Sci. 252 (2006) 5814
12. Order T.N., Martin P., Lin J.Y., Jiang H.X., Williams J.R., and Isaacs-Smith T. Appl. Phys. Lett. 88 (2006) 183505
13. Reddy V.R., Ramesh C.K., and Choi C.-J. Phys. Status Solidi (a) 203 (2005) 622
14. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
15. Drechsler M., Hofman D.M., Meyer B.K., Detchprohm T., Amano H., and Akasaki I. Jpn. J. Appl. Phys. 34 (1995) L1178
16. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1993) 85
17. Spicer W.E., Lindau I., Skeath P., Su C.Y., and Chye P. Phys. Rev. Lett. 44 (1980) 420
18. Williams R.H., Montgomery V., and Varma R.R. J. Phys. C 11 (1978) L735
19. Norde H. J. Appl. Phys. 50 (1979) 5052
20. Sun Y., Shen X.M., Wang J., Zhao D.G., Feng G., Fu Y., Zhang S.M., Zhang Z.H., Feng Z.H., Bai Y.X., and Yang H. J. Phys. D 35 (2002) 2648
21. Tyagi M.S. Metal Semiconductor Schottky Barrier Junctions and their Applications (1994), Plenum Press, New York
22. Werner J.H., and Guttler H.H. J. Appl. Phys. 69 (1991) 1522
23. Jenkins D.W., and Dow J.D. Phys. Rev. B 39 (1989) 3317