Advanced boron-based ultra-low energy doping techniques on ultra-shallow junction fabrications

IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Volumn , Issue , 2010, Pages 255-260

  Qin, Shu ^a   Hu, Y Jeff ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DOPING TECHNIQUES; ION SPECIES; MOLECULAR IMPLANTS; ROUGH SURFACES; SPUTTERING EFFECTS; ULTRA SHALLOW JUNCTION; ULTRALOW ENERGY;

BORON; BORON COMPOUNDS;

RAPID SOLIDIFICATION;

EID: 77954277578     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2010.5474885     Document Type: Conference Paper

References (18)

1. A. T. Fiory, "Recent Development in Rapid Thermal Processing", J. of Elec. Materials, Vol.31, No.10, pp.981-987, 2002.
2. K. A. Gable et al., "Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing", Mat. Res. Soc. Symp. Proc. Vol.717, pp. C1.10.1, 2002.
3. S. B. Felch, H. Graoui, S. Severi, T. Hoffmann, P. Eyben, B. Pawlak, "Meeting future SDE requirements using co-implantation and RTA", Solid State Technology, pp. 45-49, October 2006.
4. P. Kalra, P. Majhi, H. H. Tseng, L. Larson, R. Jammy, T. J. King Liu, "USJ Process Challenges for Sub-45nm CMOS", The 17th International Conference on Ion Implantation Technology (IIT2008), Monterey, CA, USA, June 08-13, 2008, AIP Conference Proceedings Vol.1066, page. 55.
5. th International Conference on Ion Implantation Technology (IIT2008), Monterey, CA, USA, June 08-13, 2008, AIP Conference Proceedings Vol.1066, page. 63.
6. D. Jacobson, "Using boron cluster ion implantation to fabricate ultra-shallow junctions", The 5th International Workshop on Junction Technology (IWJT2005), Osaka, Japan, June 7-8, 2005, Ext. Abs., pp. 23-26.
7. P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and L. A. Larson, "Plasma Immersion Ion Implantation - A Fledgling Technique for Semiconductor Processing", Materials Science & Engineering Reports, vol.R17, no.6-7, pp. 207-280, 1996. (Pubitemid 126404797)
8. S. Qin and A. McTeer, "Device Performance Improvement of PMOS Devices Fabricated by B2H6 PIII/PLAD Processing", IEEE Trans. on Electron Devices, vol.54, no.9, pp. 2497-2502, September, 2007.
9. S. Qin, A. McTeer, Y. Jeff Hu, L. Jennifer Liu, D. Panda, J. Trivedi, "Plasma Doping on 68nm CMOS Device Source/Drain Formations", The 8th International Workshop on Junction Technology (IWJT2008), Shanghai, China, May 15-16, 2008, Proceedings, pp. 8-13.
10. S. Qin and A. McTeer, "Characterization and optimization of a plasma doping process using a pulsed RF-excited continuous B2H6 plasma system", Surface and Coatings Technology, vol.201, no.15, pp. 6759-6767, April, 2007.
11. S. Qin, K. Zhuang, S. Lu, A. McTeer, W. Morinville, and K. Noehring, "SIMS/ARXPS - A New Technique of Retained Dopant Dose and Profile Measurement of Ultra-Low Energy Doping Processes", IEEE Trans. On Plasma Sci., vol.37, no.1, pp. 139-145, January 2009.
12. S. Qin, K. Zhuang, S. Lu, Y. J. Hu, and A. McTeer, "Comparative Study of Self-Sputtering Effects of Different Boron-based Low Energy Doping Techniques", IEEE Trans. on Plasma Sci., vol.37, no.9, pp. 1760-1766, September 2009.
13. V. N. Faifer, M. I. Current, T. M. H. Wong, and V. V. Souchkov, "Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions", J. Vac. Sci. Technol. B, vol.24, no.1, pp. 414-420, January 2006.
14. S. Qin, S. Prussin, J. Reyes, Y. J. Hu, A. McTeer, "Study of Low-Energy Doping Processes using Continuous Anodic Oxidation Technique/Differential Hall Effect (CAOT/DHE) Measurements", IEEE Trans. on Plasma Sci., vol.37, no.9, pp. 1754-1759, September 2009
15. S. K. Ghandhi, VLSI Fabrication Principles Silicon and Gallium Arsenide, John Wiley & Sons, Inc., New York, NY, 1994, pp. 90.
16. S. Qin, A. McTeer, K. Zhuang, W. Morinville, and S. Lu, "Comparative Study of Native Oxide Impacts on Low Energy Doping Processes", J. Vac. Sci. Technol. B, vol.28, no.1, pp. C1C77-C1C83, 2010.
17. G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and A. Carnera, "Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion", J. Appl. Phys., vol.99, 103510, 2006.
18. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol.1: Process Technology, Lattice Press, Sunset, CA, 1986, pp. 213.