Study of low-energy doping processes using continuous anodic oxidation technique/differential hall effect measurements

IEEE Transactions on Plasma Science

Volumn 37, Issue 9 SPEC. ISS. PART 1, 2009, Pages 1754-1759

  Qin, Shu ^a   Prussin, Simon A ^b   Reyes, Jason ^b   Hu, Yongjun Jeff ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carrier and mobility profiles; Continuous anodic oxidation technique differential Hall effect (CAOT DHE); Plasma doping (PLAD); Spreading resistance profiling (SRP)

Indexed keywords

ACTIVATION PROCESS; CARRIER AND MOBILITY PROFILES; CARRIER-PROFILE; CONTINUOUS ANODIC OXIDATION TECHNIQUE/DIFFERENTIAL HALL EFFECT (CAOT/DHE); DATA SUPPORT; DOPING PROCESS; DOPING TECHNIQUES; HALL EFFECT MEASUREMENT; IMPURITY PROFILE; LOW ENERGIES; PLASMA DOPING; PLASMA DOPING (PLAD); SI SUBSTRATES; SOLID SOLUBILITIES; SPREADING RESISTANCE PROFILING; SPREADING RESISTANCE PROFILING (SRP); ULTRA LOW ENERGY;

BIOACTIVITY; CARRIER CONCENTRATION; ELECTRIC CURRENTS; GALVANOMAGNETIC EFFECTS; GYRATORS; HALL MOBILITY; MOS CAPACITORS; PLASMA DIAGNOSTICS; PLASMAS; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SOLUBILITY; TERNARY SYSTEMS;

ANODIC OXIDATION;

EID: 70349462824     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2009.2028144     Document Type: Article

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