Silicon micromachining using a high-density plasma source

Journal of Physics D: Applied Physics

Volumn 34, Issue 18, 2001, Pages 2769-2774

  McAuley, S A ^a   Ashraf, H ^a   Atabo, L ^a   Chambers, A ^a   Hall, S ^a   Hopkins, J ^a   Nicholls, G ^a  

^a Surface Technology Systems Plc   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; DRY ETCHING; ELECTRIC ATTENUATORS; ELECTRON CYCLOTRON RESONANCE; GYROSCOPES; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; OPTICAL SWITCHES; PHOTOLITHOGRAPHY; PLASMA DENSITY;

ADVANCED SILICON ETCH (ASE);

SILICON WAFERS;

EID: 0035929081     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/18/309     Document Type: Article

References (8)

1. Anisotropic dry silicon etching
2. State of the art deep silicon anisotropic etching on SOI bonded substrates for dielectric isolation and MEMS applications