Modeling of threshold voltage in pentacene organic field-effect transistors

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Ou Yang, Wei ^a   Weis, Martin ^a,b   Taguchi, Dai ^a   Chen, Xiangyu ^a   Manaka, Takaaki ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DIELECTRIC LAYER; GATE INSULATOR; INSULATOR THICKNESS; LAYER THICKNESS; LINEAR RELATION; LINEAR RELATIONSHIPS; LOCAL ELECTRIC FIELD; MODEL-BASED; ORGANIC DEVICES; PENTACENE FILM; PENTACENES; PHYSICAL MEANINGS; THRESHOLD VOLTAGE SHIFTS;

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; MONOLAYERS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77954204104     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3449078     Document Type: Article

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