Reduction of threshold voltage fluctuation for organic field effect transistors by increase of insulator capacitance

Thin Solid Films

Volumn 516, Issue 9, 2008, Pages 2739-2742

  Suemori, Kouji ^a   Uemura, Sei ^a   Yoshida, Manabu ^a   Hoshino, Satoshi ^a   Kodzasa, Takehito ^a   Kamata, Toshihide ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Capacitance; Fluctuation; Organic field effect transistor; Threshold voltage

Indexed keywords

CAPACITANCE; ELECTRIC INSULATORS; THRESHOLD VOLTAGE;

INSULATOR CAPACITANCE; THRESHOLD VOLTAGE FLUCTUATION;

FIELD EFFECT TRANSISTORS;

EID: 39549101964     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.064     Document Type: Article

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12. t = sqrt(frac(2, π)) σ