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Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

Reduction of hysteresis in organic field-effect transistor by ferroelectric gate dielectric

(6) Chen, Xiangyu a Ou Yang, Wei a Weis, Martin a Taguchi, Dai a Manaka, Takaaki a Iwamoto, Mitsumasa a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPPING; ELECTROSTATIC MODELS; FERROELECTRIC GATE; FERROELECTRIC LAYERS; LANGMUIR BLODGETT TECHNIQUES; PENTACENES; SILICON DIOXIDE GATES; SPIN-COATING METHOD; TRIFLUOROETHYLENE; VINYLIDENE FLUORIDE;

COATINGS; DIELECTRIC MATERIALS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; SILICA;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77950811365 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.021601 Document Type: Article

Times cited : (15)

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