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Volumn 12, Issue 26, 2010, Pages 7171-7183

Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates

(4) Zhang, Z a,b Pan, J S a Zhang, J c Tok, E S a,b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77953947779 PISSN: 14639076 EISSN: None Source Type: Journal
DOI: 10.1039/b927274g Document Type: Article

Times cited : (17)

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