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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 852-858

Stability and composition of Ni-germanosilicided Si 1-xGe x films

(7) Pey, K L a,b Chattopadhyay, S b Choi, W K b,c Miron, Y d Fitzgerald, E A b,d Antoniadis, D A b,d Osipowicz, T c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b SINGAPORE MIT ALLIANCE (Singapore)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

d MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; GATE ELECTRODES; GRAIN-BOUNDARY ENERGY; SPUTTERING CHAMBERS;

AGGLOMERATION; ANNEALING; CMOS INTEGRATED CIRCUITS; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

PLASTIC FILMS;

EID: 2342620768 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (27)

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