Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1-xGex substrate

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 209-212

  Li, Y S ^a,b   Lee, P S ^b,d   Pey, K L ^a,c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Cobalt silicidation; Poly SiGe

Indexed keywords

COBALT SILICIDATION; GERMANOSILICIDATION; POLY-SIGE;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; GRAIN BOUNDARIES; NUCLEATION; PHOTODEGRADATION; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING;

TITANIUM COMPOUNDS;

EID: 4344641351     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.025     Document Type: Article

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