SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 357, Issue 1, 1999, Pages 76-80

Ge segregation mechanism during Si/Ge multilayer growth

(4) Sumitomo, K a Kobayashi, Y a Ito, T b Ogino, T b

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; FILM GROWTH; FREE ENERGY; INTERFACIAL ENERGY; MONTE CARLO METHODS; MULTILAYERS; PROBABILITY; RANDOM PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

MEDIUM-ENERGY ION SCATTERING (MEIS);

SEMICONDUCTING FILMS;

EID: 0033350442 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(99)00479-4 Document Type: Article

Times cited : (9)

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