RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; A two-site exchange model with growth rate dependence

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 321-326

  Tok, E S ^a,b   Woods, N J ^a   Zhang, J ^a  

^a Dept Phys Ctr Electron Mat D ^*  (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; THIN FILMS;

SILICON GERMANIDE; TWO-SITE EXCHANGE MODEL;

HETEROJUNCTIONS;

EID: 0034140287     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00563-1     Document Type: Article

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