Formation of thin gate oxides on SiGe with atomic oxygen

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 196-200

  Ogryzlo, E A ^a   Zheng, L ^a   Heinrich, B ^b   Myrtle, K ^b   Lafontaine, H ^c  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b SIMON FRASER UNIVERSITY   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Hydrogen atoms; Interfacial states; Oxidation; SiGe

Indexed keywords

OXIDATION; OXYGEN; PLASMAS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL TRAP DENSITY; SILICON GERMANIUM;

THIN FILM DEVICES;

EID: 0032068825     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00472-6     Document Type: Article

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