Photoenhanced electrochemical etching of n-GaN forced by negative bias

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 B, 2001, Pages

  Seo, J W ^a   Oh, C S ^a   Yang, J W ^a   Yoon, C J ^a   Lim, K Y ^a   Lee, H J ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Bias; CH3COOH; Energy band; GaN; Photoenhanced electrochemical etching

Indexed keywords

CURRENT DENSITY; ELECTROCHEMISTRY; ETCHING; SOLUTIONS; SUBSTRATES;

NEGATIVE BIAS; PHOTOENHANCED ELECTROCHEMICAL ETCHING;

GALLIUM NITRIDE;

EID: 0035888672     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1086     Document Type: Letter

References (15)