Recent advances on the understanding of the physics of failure of GaN on SiC FET technology

2009 Reliability of Compound Semiconductors Digest - ROCS Workshop

Volumn , Issue , 2009, Pages 57-58

  Jimenez, Jose L ^a   Chowdhury, U ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARRIER CONFINEMENTS; CRITICAL FIELDS; GAAS; HETEROBARRIERS; HIGH FREQUENCY; HIGH-VOLTAGE OPERATION; II-IV SEMICONDUCTORS; INSULATING PROPERTIES; PHYSICS OF FAILURES; RF-POWER; SEMI-INSULATING SUBSTRATE;

ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LATTICE MISMATCH; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; TECHNOLOGY; TRANSISTORS;

GALLIUM ALLOYS;

EID: 72449192181     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. Joh, and J. A. del Alamo, "Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors", Proceedings, IEEE International Electronic Device Meeting, pp. 415-418, Dec. 2006.
2. J. L. Jimenez, U. Chowdhury, M. Y. Kao, A. Balistreri, C. Lee, P. Saunier, P. C. Chao, W. W. Hu, K. Chu, A. Immorlica, J. del Alamo, J. Joh, and M. Shur, 2006 Reliability of Compound Semiconductor Workshop (ROCS06), San Antonio TX, Nov. 2006.
3. U. Chowdhury, J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri; S.-Y Park, T. Lee, J. Wang, M. J. Kim; J. Joh, and J. A. del Alamo "TEM observation of crack- and pit-shaped defects in electrically degraded GaN HEMTs, Electronics Device Letters, Aug 2008.
4. J. L. Jimenez and U. Chowdhury, 2008 Internatianal Reliability Physics Symposium. (IRPS08), Phoenix AZ, May. 2008.