Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Gan, H D ^a   Ikeda, S ^a   Shiga, W ^a   Hayakawa, J ^b   Miura, K ^a,b   Yamamoto, H ^a,b   Hasegawa, H ^b   Matsukura, F ^a   Ohkubo, T ^c   Hono, K ^c   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; FILM STRUCTURE; FREE LAYERS; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; ROOM TEMPERATURE; TUNNEL MAGNETORESISTANCE;

ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 77952972442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429594     Document Type: Article

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