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Volumn 87, Issue 9 III, 2000, Pages 6064-6066

Double tunnel junctions for magnetic random access memory devices

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[No Author keywords available]

Indexed keywords


EID: 0000418753     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372613     Document Type: Article
Times cited : (41)

References (18)
  • 11
    • 4243106105 scopus 로고    scopus 로고
    • US Patent No. 5793697 (1998)
    • R. E. Scheuerlein, US Patent No. 5793697 (1998).
    • Scheuerlein, R.E.1
  • 14
    • 0000447427 scopus 로고    scopus 로고
    • K. Inomata, H. Ogiwara, Y. Saito, K. Yusu, and K. Ichihara, Jpn. J. Appl. Phys., Part 2 36, L1380 (1997); K. Inomata and Y. Saito, Appl. Phys. Lett. 73, 1143 (1998); Y. Saito, K. Nakajima, K. Tanaka, and K. Inomata, IEEE Trans. Magn. (in press).
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 1143
    • Inomata, K.1    Saito, Y.2
  • 15
    • 0031249064 scopus 로고    scopus 로고
    • in press
    • K. Inomata, H. Ogiwara, Y. Saito, K. Yusu, and K. Ichihara, Jpn. J. Appl. Phys., Part 2 36, L1380 (1997); K. Inomata and Y. Saito, Appl. Phys. Lett. 73, 1143 (1998); Y. Saito, K. Nakajima, K. Tanaka, and K. Inomata, IEEE Trans. Magn. (in press).
    • IEEE Trans. Magn.
    • Saito, Y.1    Nakajima, K.2    Tanaka, K.3    Inomata, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.