Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Nozaki, T ^a   Hirohata, A ^b   Tezuka, N ^a,b   Sugimoto, S ^a   Inomata, K ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAMS; ION BOMBARDMENT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; POLARIZATION; SINGLE CRYSTALS; THIN FILMS;

DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS (DMTJ); MAGNETIC TUNNEL JUNCTION (MTJ); SPINTRONIC DEVICES; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 17044384624     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1867559     Document Type: Article

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