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Volumn 105, Issue 3, 2009, Pages

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

EID: 60449094241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068186     Document Type: Article
Times cited : (52)

References (30)
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    • Miyazaki, T.1    Tezuka, N.2
  • 10
    • 0034906915 scopus 로고    scopus 로고
    • 0163-1829 10.1103/PhysRevB.63.220403.
    • J. Mathon and A. Umerski, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63. 220403 63, 220403 (2001).
    • (2001) Phys. Rev. B , vol.63 , pp. 220403
    • Mathon, J.1    Umerski, A.2
  • 12
    • 1042302189 scopus 로고    scopus 로고
    • 0375-9601 10.1016/j.physleta.2003.10.010.
    • C. Lu, M. W. Wu, and X. F. Han, Phys. Lett. A 0375-9601 10.1016/j.physleta.2003.10.010 319, 205 (2003).
    • (2003) Phys. Lett. A , vol.319 , pp. 205
    • Lu, C.1    Wu, M.W.2    Han, X.F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.