Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Ikeda, S ^a   Hayakawa, J ^a,b   Lee, Y M ^a   Tanikawa, T ^a,c   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ELECTROCHEMICAL ELECTRODES; MAGNETORESISTANCE; POLYCRYSTALLINE MATERIALS;

BCC STRUCTURES; MAGNETIC TUNNEL JUNCTIONS (MTJ); SPIN TUNNELING TRANSPORT; TUNNEL MAGNETORESISTANCE (TMR) RATIO;

TUNNEL JUNCTIONS;

EID: 33646736969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2176588     Document Type: Article

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