Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Ibusuki, Takahiro ^a   Miyajima, Toyoo ^a   Umehara, Shinjiro ^a   Eguchi, Shin ^a   Sato, Masashige ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; BORON; BORON COMPOUNDS; COBALT COMPOUNDS; CRYSTALLIZATION; ELECTRIC RESISTANCE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MASS SPECTROMETRY; MATERIALS; NANOCRYSTALLINE ALLOYS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TANTALUM; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

ABSORPTION LAYERS; ANNEALING TEMPERATURES; CAPPING MATERIALS; CRYSTALLIZATION PROCESS; FREE LAYERS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; MAGNETIC TUNNEL JUNCTIONS; MR RATIOS; RU CAPPING LAYERS; SECONDARY ION MASS SPECTROSCOPIES; TI CAPPING;

MATERIALS PROPERTIES;

EID: 60349085302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080208     Document Type: Article

References (9)

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