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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

Influence of chemical composition of CoFeB on tunneling magnetoresistance and microstructure in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions

(6) Tsunekawa, Koji a,b Choi, Young Suk a Nagamine, Yoshinori a Djayaprawira, David D a Takeuchi, Takashi b Kitamoto, Yoshitaka b

a Canon ANELVA Corporation ^* (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

CoFeB; Coherent tunneling; Crystallization; Magnetic tunnel junction; MgO tunnel barrier; Tunneling magnetoreslstance effect

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION KINETICS; EPITAXIAL GROWTH; MAGNETORESISTANCE; POLYCRYSTALLINE MATERIALS;

COHERENT TUNNELING; MAGNETIC TUNNEL JUNCTIONS; TUNNEL BARRIERS; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33846090519 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L1152 Document Type: Article

Times cited : (28)

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