Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages 1937-1939

  Ikeda, Shoji ^a   Hayakawa, Jun ^a,b   Lee, Young Min ^a   Matsukura, Fumihiro ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

CoFeB; MgO barrier; Tunnel magnetoresistance

Indexed keywords

ANNEALING; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNESIA; MAGNETORESISTANCE;

ANNEALING TEMPERATURE; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33847627886     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.770     Document Type: Article

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