Spin-polarized tunneling and magnetoresistance in ferromagnet/insulator(semiconductor) single and double tunnel junctions subjected to an electric field

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 9, 1997, Pages 5484-5488

  Zhang, Xiangdong ^a   Li, Bo Zang ^a   Sun, Gang ^a   Pu, Fu Cho ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142164079     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.5484     Document Type: Article

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