Dynamics of porous silicon formation by etching in HF + V2O 5 solutions

Molecular Physics

Volumn 108, Issue 7-9, 2010, Pages 1033-1043

  Kolasinski, Kurt W ^a   Hartline, Justin D ^a   Kelly, Bryan T ^a   Yadlovskiy, Julia ^a  

^a WEST CHESTER UNIVERSITY   (United States)

Author keywords

Etching; Laser surface interactions; Nanostructures; Reaction dynamics; Surface chemistry

Indexed keywords

AQUEOUS SOLUTIONS; ETCH DEPTH; ETCH RATES; HF CONCENTRATION; LASER/SURFACE INTERACTIONS; LINEAR DEPENDENCE; NONLINEAR DEPENDENCE; PORE DENSITIES; PORE FORMATION; PORE MORPHOLOGY; POROUS SILICON FORMATION; REACTION DYNAMICS; REACTIVE STICKING COEFFICIENT; SATURATION VALUES; SI ATOMS; SI SURFACES; SILICON VALENCE BAND; SURFACE AREA; UNIFORM DIAMETER; VANADIUM PENTOXIDE;

CAPILLARITY; DISSOLUTION; DYNAMICS; ETHANOL; FILM GROWTH; HYDROFLUORIC ACID; INFRARED SPECTROSCOPY; NANOSTRUCTURES; POROUS SILICON; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE REACTIONS; VANADIUM; VANADIUM COMPOUNDS;

SILICON WAFERS;

EID: 77952934683     PISSN: 00268976     EISSN: 13623028     Source Type: Journal    
DOI: 10.1080/00268971003639258     Document Type: Article

References (93)

1. D.S. Wiersma, R. Sapienza, S. Mujumdar, M. Colocci, M. Ghulinyan and L. Pavesi, J. Optics A 7, S190 (2005).
2. O. Bisi, S. Ossicini and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
3. D.J. Lockwood and L. Pavesi, in Silicon Photonics, edited by D.J. Lockwood and L. Pavesi (Springer, Berlin, 2004), Vol.94, p. 1.
4. L. Pavesi, Riv. Nuovo Cimento 20, 1 (1997).
5. S. Ozdemir and J.L. Gole, Curr. Opin. Solid State Mater. Sci. 11, 92 (2007).
6. J.J. Saarinen, S.M. Weiss, P.M. Fauchet and J.E. Sipe, Opt. Express 13, 3754 (2005).
7. B. Lillis, C. Jungk, D. Iacopino, A. Whelton, E. Hurley, M.M. Sheehan, A. Splinter, A. Quinn, G. Redmond, W.A. Lane, A. Mathewson and H. Berney, Biosens. Bioelectron. 21, 282 (2005).
8. F.P. Mathew and E.C. Alocilja, Biosens. Bioelectron. 20, 1656 (2005).
9. M.J. Sailor and J.R. Link, Chem. Commun. 1375 (2005).
10. K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).
11. Y. Nakajima, T. Uchida, H. Toyama, A. Kojima, B. Gelloz and N. Koshida, Jpn J. Appl. Phys. Part 1 43, 2076 (2004).
12. A. Kojima and N. Koshida, Appl. Phys. Lett. 86, 022102 (2005).
13. K. Tsubaki, H. Yamanaka, K. Kitada, T. Komoda and N. Koshida, Jpn J. Appl. Phys. Part 1 44, 4436 (2005).
14. C.C. Striemer, T.R. Gaborski, J.L. McGrath and P.M. Fauchet, Nature (London) 445, 749 (2007).
15. L.T. Canham, C.L. Reeves, D.J. Wallis, J.P. Newey, M.R. Houlton, G.J. Sapsford, R.E. Godfrey, A. Loni, A.J. Simons, T.I. Cox and M.C.L. Ward, Mater. Res. Soc. Symp. Proc. 452, 579 (1997).
16. Y.H. Kim, H. Song, D.H. Riu, S.R. Kim, H.J. Kim and J.H. Moon, Curr. Appl. Phys. 5, 538 (2005).
17. J.H. Park, L. Gu, G . von Maltzahn, E. Ruoslahti, S.N. Bhatia and M.J. Sailor, Nature Mater. 8, 331 (2009).
18. D.K. Kang, J.A. Corno, J.L. Gole and H.C. Shin, J. Electrochem. Soc. 155, A276 (2008).
19. H. Kim, B. Han, J. Choo and J. Cho, Angew. Chem. Int. Ed. Engl. 47, 10151 (2008).
20. W. Sun, N.P. Kherani, K.D. Hirschman, L.L. Gadeken and P.M. Fauchet, Adv. Mater. 17, 1230 (2005).
21. A.G. Cullis, L.T. Canham and P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997).
22. K.W. Kolasinski, Curr. Opin. Solid State Mater. Sci. 9, 73 (2005).
23. H. Robbins and B. Schwartz, J. Electrochem. Soc. 106, 505 (1959).
24. H. Robbins and B. Schwartz, J. Electrochem. Soc. 107, 108 (1960).
25. H. Robbins and B. Schwartz, J. Electrochem. Soc. 108, 365 (1961).
26. D.R. Turner, J. Electrochem. Soc. 107, 810 (1960).
27. M.I.J. Beale, J.D. Benjamin, M.U. Uren, N.G. Chew and A.G. Cullis, J. Cryst. Growth 75, 408 (1986).
28. E.S. Kooij, K. Butter and J.J. Kelly, Electrochem. Solid State Lett. 2, 178 (1999).
29. H. Föll, M. Christophersen, J. Carstensen and G. Hasse, Mater. Sci. Eng. R 39, 93 (2002).
30. J. Carstensen, M. Christophersen and H. Föll, Mater. Sci. Eng. B 69/70, 23 (2000).
31. H. Föll, J. Carstensen, M. Christophersen and G. Hasse, Phys. Status Solidi A 182, 7 (2000).
32. S.W. Leonard, H.M. van Driel, K. Busch, S. John, A. Birner, A.-P. Li, F. Müller, U. Gösele and V. Lehmann, Appl. Phys. Lett. 75, 3063 (1999).
33. S. Frohnhoff, M.G. Berger, M. Thönnisen, C. Dieker, L. Vescan, H. Münder and H. Lüth, Thin Solid Films 255, 59 (1995).
34. H. Gerischer, P. Allongue and V. Costa Kieling, Ber. Bunsen-Ges. Phys. Chem. 97, 753 (1993).
35. K.W. Kolasinski, Surf. Sci. 603, 1904 (2009).
36. K.W. Kolasinski, Phys. Chem. Chem. Phys. 5, 1270 (2003).
37. M. Steinert, J. Acker, M. Krause, S. Oswald and K. Wetzig, J. Phys. Chem. B 110, 11377 (2006).
38. M. Steinert, J. Acker, S. Oswald and K. Wetzig, J. Phys. Chem. C 111, 2133 (2007).
39. M. Nahidi and K.W. Kolasinski, J. Electrochem. Soc. 153, C19 (2006).
40. M. Steinert, J. Acker, A. Henssge and K. Wetzig, J. Electrochem. Soc. 152, C843 (2005).
41. M. Steinert, J. Acker and K. Wetzig, J. Phys. Chem. C 112, 14139 (2008).
42. M.E. Dudley and K.W. Kolasinski, Phys. Status Solidi A 206, 1240 (2009).
43. M.E. Dudley and K.W. Kolasinski, Electrochem. Solid State Lett. 12, D22 (2009).
44. D. Brumhead, L.T. Canham, D.M. Seekings and P.J. Tufton, Electrochim. Acta 38, 191 (1993).
45. Y.J. Chabal, A.L. Harris, K. Raghavachari and J.C. Tully, Int. J. Mod. Phys. B 7, 1031 (1993).
46. Y.J. Chabal, Physica B 170, 447 (1991).
47. Y.J. Chabal, Surf. Sci. Rep. 8, 211 (1988).
48. X. Zhang, E. Garfunkel, Y.J. Chabal, S.B. Christman and E.E. Chaban, Appl. Phys. Lett. 79, 4051 (2001).
49. X. Zhang, Y.J. Chabal, S.B. Christman, E.E. Chaban and E. Garfunkel, J. Vac. Sci. Technol. A 19, 1725 (2001).
50. M. Niwano, J.-I. Kageyama, K. Kurita, K. Kinashi, I. Takahashi and N. Miyamoto, J. Appl. Phys. 76, 2157 (1994).
51. M. Niwano, J.-I. Kageyama, K. Kinashi, J.-I. Sawahata and N. Miyamoto, Surf. Sci. 301, L245 (1994).
52. P. Gupta, V.L. Colvin and S.M. George, Phys. Rev. B 37, 8234 (1988).
53. L.M. Peter, D.J. Blackwood and S. Pons, Phys. Rev. Lett. 62, 308 (1989).
54. L.M. Peter, D.J. Blackwood and S. Pons, J. Electroanal. Chem. 294, 111 (1990).
55. A.V. Rao, F. Ozanam and J.-N. Chazalviel, J. Electrochem. Soc. 138, 153 (1991).
56. V.M. Dubin, F. Ozanam and J.-N. Chazalviel, Phys. Rev. B 50, 14867 (1994).
57. R. Outemzabet, M. Cherkaoui, N. Gabouze, F. Ozanam, N. Kesri and J.-N. Chazalviel, J. Electrochem. Soc. 153, C108 (2006).
58. R. Outemzabet, M. Cherkaoui, F. Ozanam, N. Gabouze, N. Kesri and J.N. Chazalviel, J. Electroanal. Chem. 563, 3 (2004).
59. J. Eng, K. Raghavachari, L.M. Struck, Y.J. Chabal, B.E. Bent, G.W. Flynn, S.B. Christman, E.E. Chaban, G.P. Williams, K. Radermacher and S. Manti, J. Chem. Phys. 106, 9889 (1997).
60. J.L. Gole and D.A. Dixon, J. Phys. Chem. B 101, 8098 (1997).
61. D.B. Mawhinney, J.A. Glass and J.T. Yates Jr, J. Phys. Chem. B 101, 1202 (1997).
62. J.E.A.M. van den Meerakker and J.H.C van Vegchel, J. Electrochem. Soc. 136, 1949 (1989).
63. P. Ayotte, M. Hébert and P. Machand, J. Chem. Phys. 123, 184501 (2005).
64. K.W. Kolasinski, J. Electrochem. Soc. 152, J99 (2005).
65. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
66. S. Frohnhoff, M. Marso, M.G. Berger, M. Thönissen, H. Lüth and H. Münder, J. Electrochem. Soc. 142, 615 (1995).
67. T. van Buuren, L.N. Dinh, L.L. Chase, W.J. Siekhaus and L.J. Terminello, Phys. Rev. Lett. 80, 3803 (1998).
68. G.D. Kubiak, J.E. Hurst Jr, H.G. Rennagel, G.M. McClelland and R.N. Zare, J. Chem. Phys. 79, 5163 (1983).
69. G.M. McClelland, G.D. Kubiak, H.G. Rennagel and R.N. Zare, Phys. Rev. Lett. 46, 831 (1981).
70. H.A. Michelsen, C.T. Rettner and D.J. Auerbach, in Surface Reactions: Springer Series in Surface Sciences, edited by R.J. Madix (Springer, Berlin, 1994), Vol.34, p. 185.
71. D.C. Jacobs, K.W. Kolasinski, S.F. Shane and R.N. Zare, J. Chem. Phys. 91, 3182 (1989).
72. K.W. Kolasinski, S.F. Shane and R.N. Zare, J. Chem. Phys. 96, 3995 (1992).
73. H.A. Michelsen, C.T. Rettner, D.J. Auerbach and R.N. Zare, J. Chem. Phys. 98, 8294 (1993).
74. A. Hodgson, Prog. Surf. Sci. 63, 1 (2000).
75. G.R. Darling and S. Holloway, Rep. Prog. Phys. 58, 1595 (1995).
76. M. Dürr and U. Höfer, Surf. Sci. Rep. 61, 465 (2006).
77. L.S. Jung and C.T. Campbell, Phys. Rev. Lett. 84, 5164 (2000).
78. H. Gerischer and F. Beck, Z. Phys. Chem. (Neue Folge) 24, 378 (1960).
79. K.W. Kolasinski, Surface Science: Foundations of Catalysis and Nanoscience, 2nd ed. (Wiley, Chichester, 2008).
80. L. Koker and K.W. Kolasinski, J. Phys. Chem. B 105, 3864 (2001).
81. I. Zubel and M. Kramkowska, Sens. Actuators A 101, 255 (2002).
82. I. Zubel and M. Kramkowska, Sens. Actuators A 93, 138 (2001).
83. R.A. Wind and M.A. Hines, Surf. Sci. 460, 21 (2000).
84. R.A. Wind, H. Jones, M.J. Little and M.A. Hines, J. Phys. Chem. B 106, 1557 (2002).
85. P. Luxenberg and J.I. Kim, Z. Phys. Chem. (Neue Folge) 121, 173 (1980).
86. S. Velusamy and T. Punniyamurthy, Org. Lett. 6, 217 (2004).
87. N. Jiang and A.J. Ragauskas, J. Org. Chem. 72, 7030 (2007).
88. B.X. Li, Y. Xu, G.X. Rong, M. Jing and Y. Xie, Nanotechnology 17, 2560 (2006).
89. T. Tsuboi, T. Sakka, Y.H. Ogata and S. Naito, J. Porous Mater. 7, 327 (2000).
90. T. Tsuboi, T. Sakka and Y.H. Ogata, Solid State Commun. 109, 195 (1999).
91. Y.H. Ogata, F. Kato, T. Tsuboi and T. Sakka, J. Electrochem. Soc. 145, 2439 (1998).
92. Y. Ogata, H. Niki, T. Sakka and M. Iwasaki, J. Electrochem. Soc. 142, 1595 (1995).
93. Y. Ogata, H. Niki, T. Sakka and M. Iwasaki, J. Electrochem. Soc. 142, 195 (1995).