Dissociative adsorption of molecular hydrogen on silicon surfaces

Surface Science Reports

Volumn 61, Issue 12, 2006, Pages 465-526

  Durr M ^a,b   Hofer U ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b ESSLINGEN UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

Activated adsorption; Dissociative adsorption; Hydrogen; Reaction dynamics; Recombinative desorption; Scanning tunnelling microscopy; Second harmonic generation; Semiconductor surface; Silicon; Sticking coefficient; Supersonic molecular beam

Indexed keywords

ADSORPTION; DISSOCIATION; HYDROGEN; MOLECULAR DYNAMICS; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SECOND HARMONIC GENERATION; SILICON;

ACTIVATED ADSORPTION; DISSOCIATIVE ADSORPTION; RECOMBINATIVE DESORPTION; SEMICONDUCTOR SURFACE; STICKING COEFFICIENT; SUPERSONIC MOLECULAR BEAMS;

HYDROGEN BONDS;

EID: 33751234965     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfrep.2006.08.002     Document Type: Review

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