Optical properties of InN grown on Si(111) substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1066-1069

  Sakalauskas, E ^a   Schley, P ^a   Rathel J ^a   Klar, T A ^a   Muller R ^a   Pezoldt, J ^a   Tonisch, K ^a   Grandal, J ^b   Sanchez Garcia M A ^b   Calleja, E ^b   Vilalta Clemente, A ^c   Puteran, R ^c   Roldhah, G ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Direction de la Recherche Fondamentale   (France)

Author keywords

Band gap; InN films; Interband transitions; Optical properties; PAMBE

Indexed keywords

ABSORPTION ONSET; BAND FILLINGS; BAND GAP RENORMALIZATION; BAND GAPS; CRITICAL POINTS; DIELECTRIC FUNCTIONS; ELECTRON CONCENTRATION; ELECTRON DENSITIES; GAN/SAPPHIRE; HIGH ENERGY; INN FILMS; INN LAYERS; INTER-BAND TRANSITION; INTERBAND ABSORPTION; INTERBAND TRANSITIONS; PLASMA FREQUENCIES; SAPPHIRE SUBSTRATES; SI(111) SUBSTRATE; WURTZITES;

ABSORPTION; CRYSTAL GROWTH; ENERGY GAP; EQUATIONS OF STATE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PLASMA WAVES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 77952697142     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983102     Document Type: Conference Paper

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